English
Mainly consists of an InGaAs photosensitive chip with a 1024×1 pixel size, a read-out circuit (ROIC), and primary thermoelectric cooler (TEC), housed in a ceramic package
Pixel size: 12.5μm × 125μm
Large light-sensitive area, compact size, multi-level gain capability, and high spectral resolution
Suitable for applications such as short-wave infrared imaging, industrial inspection, and color sorting.
| Model No. | FV-SD-A640512 | |
| Photoelectric Performance | ||
| Spectral response range (μm) | 0.95 ±0.05 ~ 1.65 ±0.05 | |
| Fill factor(%) | 100 | |
| Peak quantum efficiency（%） | ≥70 | |
| Peak detectivity (cm./w) | ≥5×1012 | |
| Peak photosensitivity (A/W) | ≥0.8 | |
| Effective pixel rate (%) | >99.5 | |
| Response nonuniformity (%) | ≤3 | |
| Readout way | IWR, ITR | |
| Readout rate (MHz) | 1~22 | |
| Number of readout channels | 2 | |
| Maximum Frame Rate (fps) | 33k | |
| Gain Level | 7 | |
| Conversion Gain (μV/e-) | 25(G1), 10(G2), 5.3(G3), 1.3(G4), 0.26(G5), 0.1(G6), 0.076(G7) | |
| Dynamic range (dB) | ≥55 | |
| Output Voltage Amplitude (V) | 1.8±0.2V | |
| Mechanical Parameters | ||
| Length × Width × Height (mm) | 29× 17× 6.62 | |
| Weight (g) | ~9 | |
| Pixel format | 1024×1 | |
| Pixel center distance (μm) | 12.5 | |
| Pixel size (μm) | 12.5× 125 | |
| Photosensitivity area (mm) | 12.8× 0.125 | |
| Operation environment and power consumption parameters | ||
| Operating temperature (˚C) | -20~+60 | |
| Storage temperature (˚C) | -40~+70 | |
| Typical power (W) | <0.3 | |
Note: Details are subject to change without prior notice. Please refer to latest product datasheet.
